2010 Events

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The power system is in transition to a grid structure capable of delivering optimal electric power by incorporating enabling technologies such as advanced control strategies, integrated communication, and improved communictaion.

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The demand for high speed and high bandwidth of data transmission in communication systems is rapidly growing. Electronic processing of optical signals currently used in communication networks requires optical-to-electrical and then back to optical (OEO) conversion, which involves a lot of bulk optical components, separately fabricated, tested, packaged, and then assembled and aligned. The role of photonic integration at present is to replace the expensive bulk optics in transmitters and receivers by integrated optical circuits containing all the necessary optical components on a single chip. Practical realization of integrated optics requires a single robust material platform for integrating multiple optical components, including lasers, modulators, detectors, and passive optical devices, on a single chip.

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With the recent upswing in the economic activities in countries such as India and China, global focus on educational needs of such countries has significantly increased.

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Photonic crystal based devices are gaining popularity in optical communication systems. The photonic crystals are realized by introducing periodicity in the material properties like refractive index.

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Stringent power requirements in the chips by the International Technology Roadmap for Semiconductors (ITRS) dictate replacement of silicon dioxide as it has already reached the direct tunneling regime. Therefore, for high speed and low power applications high-k dielectric materials are being integrated into standard CMOS technologies. At present, reliability requirements of advanced gate stacks with high-k dielectrics are of intensive research interests as these high-k dielectrics needs to meet the silicon dioxide standards. In this talk some of the inherent asymmetry on breakdown characteristics of interfacial layer (IL) and high-k layer in the overall gate stacks breakdown will be discussed. Gate stack’s response to many degradation mechanisms such as charge trapping and defect generation,soft breakdown, progressive breakdown and finally hard breakdown will be evaluated as a function of ILs, grown on various process conditions. Correlation of stress-induced leakage current (SILC) with the breakdown behavior will be outlined.

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Over the past ten years, the threat of IEMI has been studied by many scientists and engineers throughout the world. The vulnerabilities of modern electronic systems have been evaluated and the types of weapons that can be built have also been determined. It is now possible to establish the types of protection that can be applied to reduce this threat in a cost-effective fashion. This lecture will review the history of this work and will discuss the new protection approaches that have been recommended and are being standardized by the International Electrotechnical Commission (IEC).

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Recent advances in computational electromagnetic tools made antenna design possible along with integration of antennas on various ground, sea and air platforms. Full wave techniques such as Method of Moments (MoM), Multilevel Fast Multipole Method (MLFMM) along with asymptotic techniques such as Physical Optics (PO), Geometrical Optics (GO) and Uniform Theory of Diffraction (UTD) will be reviewed. Application of these and hybrid numerical techniques for antenna designs, antenna-platform interaction studies, EMI/EMC, bioelectromagentics and Radio Frequency Identification (RFID) system design. For many practical applications, sometimes it is necessary to study the electromagnetic behavior on a specific structure over a broad frequency band, and therefore it is important to have some benchmark data on computational resources needed for some commonly used numerical techniques. During this workshop, various antenna design applications will be examined. Also a full-size air, ground and sea platforms are considered and the frequency limit is pushed at different bands using several numerical techniques. A benchmark study of computational resources required by available computational tools for electrically large platforms will be presented.

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Currently emerging biosensing and intracortical stimulation devices are promising alternative to allow studying the neural activity underlying cognitive functions and pathologies, understanding neurons interactions, locating seizures, detecting mind driven decisions, and achieve efficient treatment for these central neural systems. This talk covers low-power analog circuits and packaging techniques used for the design and integration of biosensing Microsystems. Such devices are interconnected to intracortical neural tissues, and include high-reliability wireless links used to power up such implanted devices and bidirectionally exchange data with external base station. Global view of typical devices altogether with corresponding multidimensional challenges will be described. Special attention will be paid to report two case studies: 1) Automatic detection of action potentials from massively parallel channels, and 2) Epilepsy seizures monitoring and onset treatment.

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Ultra Wideband (UWB) technology has been gaining attention from both industry and academia since the Federal Communications Commission (FCC) authorized the unlicensed use of its 0-900MHz or 3.1-10.6GHz spectrum. A UWB system is defined as any system whose signals have a -10dB fractional bandwidth at least 20% of its center frequency, or a -10dB absolute bandwidth greater than 500MHz. Given the large bandwidth of UWB systems, in order to avoid interference to other wireless systems, the FCC has set an extremely low power spectral density mask for UWB systems, the maximum equivalent isotopic radiated power (EIRP) spectral density of which is - 41.3dBm/MHz. In this presentation, we will provide an introduction to the UWB impulse radio systems, their developments and the recent emerging code-shifted-reference transceiver technology.